27 Si
14 13
Half life: 4.16 s 2
Jp: 5/2+
Decay mode: e+b+
Sn (keV): 13311 3
Sp (keV): 7463.06 19
Prod. mode: Charged particle reaction
Literature cut-off date: 1-Jun-1990
Author(s): P.M. Endt
ENSDF citation: NP A521,1 (1990)

Decay properties

Mode Branching (%) Q-value (keV)
e+b+ 100 4812.40 10

Gammas from 27Si (4.16 s 2)

Eg (keV) Ig (%) Decay mode
170.68 5 0.0005 e+b+
843.74 3 0.0005 e+b+
1014.42 3 0.0172 24 e+b+
1720.3 8 0.0122 16 e+b+
2211.0 7 0.180 13 e+b+
2734.7 8 0.0033 6 e+b+
2981.82 6 0.026 3 e+b+
3004.0 9 e+b+

X-rays from 27Si (4.16 s 2)

E (keV) I (%) Assignment
0,073 1.4E-06 4 Al Lb1
0,112 5.8E-08 21 Al Lb4
0,112 9E-08 3 Al Lb3
1,442 1.25E-11 13 Al Ka3
1,486 0.00082 9 Al Ka2
1,487 0.00165 17 Al Ka1
1,554 5.0E-06 5 Al Kb3
1,554 9.9E-06 10 Al Kb1

Betas from 27Si (4.16 s 2)

>Eb endpoint (keV) Ib (%) Decay mode
808,4 0.0239 19 b+
1055,5 0.0165 15 b+
1579,3 0.179 14 b+
1830,4 0.00177 14 e
2077,5 0.00052 5 e
2601,3 0.00163 13 e
2775,95 0.0060 9 b+
3790,4 99.705 20 b+
3797,95 0.0000099 15 e
4812,4 0.0650 7 e