33 Si
14 19
Half life: 6.18 s 18
Decay mode: b-
Sn (keV): 4483 16
Sp (keV): 16719 88
Prod. mode: Charged particle reaction
Literature cut-off date: 1-Jun-1990
Author(s): P.M. Endt
ENSDF citation: NP A521,1 (1990)

Decay properties

Mode Branching (%) Q-value (keV)
b- 100 5845 16

Gammas from 33Si (6.18 s 18)

Eg (keV) Ig (%) Decay mode
416.00 6.7 6* b-
1431.6 13.1 10* b-
1847.54 100 1* b-
2538.5 9.3 8* b-