28 P
15 13
Half life: 270.3 ms 5
Jp: 3+
Decay mode: e+b+, ep, ea
Sn (keV): 14479 35
Sp (keV): 2066 4
Prod. mode: Charged particle reaction
Literature cut-off date: 1-Jun-1990
Author(s): P.M. Endt
ENSDF citation: NP A521,1 (1990)

Decay properties

Mode Branching (%) Q-value (keV)
e+b+ 100 14332 4
ep 0.0013 4
ea 0.00086 25

Gammas from 28P (270.3 ms 5)

Eg (keV) Ig (%) Decay mode
1352.09 17 0.140 8 e+b+
1516.86 14 0.204 14 e+b+
1522.76 12 0.9 e+b+
1657.19 13 0.40 17 e+b+
1658.28 9 0.8 e+b+
1778.969 12 97.5 5 e+b+
2312.40 13 0.196 6 e+b+
2838.67 5 2.35 5 e+b+
2953.36 13 0.081 3 e+b+
3039.54 13 2.70 7 e+b+
3104.6 3 0.024 4 e+b+
3180.95 10 0.032 3 e+b+
3251.58 16 0.032 4 e+b+
3278.61 13 0.098 4 e+b+
3315.37 11 0.101 6 e+b+
3970.54 11 0.116 24 e+b+
4496.78 8 11.0 3 e+b+
5108.8 5 0.050 3 e+b+
6019.28 10 1.75 8 e+b+
6153.69 11 0.112 10 e+b+
6478.90 11 0.385 8 e+b+
6808.79 11 3.33 11 e+b+
7415.20 10 0.21 6 e+b+
7535.80 11 8.5 3 e+b+
7601.41 13 0.55 3 e+b+
7932.24 11 2.15 11 e+b+
8015.68 15 0.040 6 e+b+
8257.43 11 0.052 6 e+b+
8428.6 3 0.029 4 e+b+
8887.50 14 0.086 8 e+b+
9379.86 12 0.0202 25 e+b+
9477.76 12 0.11 e+b+
9794.11 15 0.013 3 e+b+

X-rays from 28P (270.3 ms 5)

E (keV) I (%) Assignment
0,100 8E-09 3 Si Lb1
0,146 1.3E-09 5 Si Lb3
0,146 8E-10 3 Si Lb4
1,739 1.66E-05 18 Si Ka2
1,740 3.3E-05 4 Si Ka1
1,836 2.9E-07 3 Si Kb3
1,836 5.7E-07 6 Si Kb1

Betas from 28P (270.3 ms 5)

>Eb endpoint (keV) Ib (%) Decay mode
216,9 0.000013 6 b+
410,6 0.00019 4 b+
584,7 0.000018 13 b+
595,8 0.00004 2 b+
737,1 0.00034 8 b+
759,7 0.00008 2 b+
869,7 0.00039 7 b+
1020,5 0.00071 13 b+
1238,7 0.00013 3 b+
1379 0.000021 11 b+
1653,4 0.00023 6 b+
1794,7 0.00007 3 b+
2641,66 0.26 4 b+
2641,95 0.26 4 b+
3100,99 0.038 5 b+
3514,05 0.054 6 b+
3830,51 0.064 8 b+
3928,45 0.60 2 b+
3994,08 11.3 4 b+
4721,29 3.64 14 b+
5051,26 0.536 15 b+
5376,55 2.76 20 b+
5510,99 2.45 9 b+
5893,74 0.20 6 b+
7033,8 7.6 3 b+
8692,14 1.92 18 b+
11530,97 69.2 7 b+