29 P
15 14
Half life: 4.140 s 14
Jp: 1/2+
Decay mode: e+b+
Sn (keV): 17862 4
Sp (keV): 2748.1 7
Prod. mode: Charged particle reaction
Literature cut-off date: 1-Jun-1990
Author(s): P.M. Endt
ENSDF citation: NP A521,1 (1990)

Decay properties

Mode Branching (%) Q-value (keV)
e+b+ 100 4943.1 7

Gammas from 29P (4.140 s 14)

Eg (keV) Ig (%) Decay mode
397.81 7 0.00044 12 e+b+
754.79 7 0.0039 3 e+b+
1152.593 19 0.0150 15 e+b+
1273.367 12 1.549 10 e+b+
2028.12 6 0.063 3 e+b+
2425.907 15 0.097 7 e+b+

X-rays from 29P (4.140 s 14)

E (keV) I (%) Assignment
0,100 8.3E-07 25 Si Lb1
0,146 1.3E-07 5 Si Lb3
0,146 8E-08 3 Si Lb4
1,690 2.7E-11 3 Si Ka3
1,739 0.00124 13 Si Ka2
1,740 0.0025 3 Si Ka1
1,836 2.15E-05 22 Si Kb3
1,836 4.2E-05 4 Si Kb1